Physical Properties of Self-Assembled Porous Alumina Structures Filled with Iodine

Authors

  • Natalia Alekseeva Department of Physics, Faculty of Physics and Mathematics, Pskov State University, Lenin Square 2, Pskov 180000, Russia
  • Grigory Cema Department of Physics, Faculty of Physics and Mathematics, Pskov State University, Lenin Square 2, Pskov 180000, Russia
  • Dmitry Podorozhkin Resource Centre for Diagnosis of Functional Materials in Medicine, Pharmacology and Nanoelectronics of St. Petersburg State University
  • Vladimir Solovyev Department of Physics, Faculty of Physics and Mathematics, Pskov State University, Lenin Square 2, Pskov 180000, Russia
  • Sergey Trifonov Department of Physics, Faculty of Physics and Mathematics, Pskov State University, Lenin Square 2, Pskov 180000, Russia
  • Victor Veisman Department of Physics, Faculty of Physics and Mathematics, Pskov State University, Lenin Square 2, Pskov 180000, Russia

DOI:

https://doi.org/10.13052/jsame2245-4551.212

Keywords:

porous alumina, iodine nanoparticles, nanocomposite, electrical conduction, ellipsometry, phase transition.

Abstract

Self-assembled porous alumina structures (por Al2O3) were prepared by two-
step anodization process and characterized by scanning electron microscopy.
Filling quasi one-dimensional parallel nanochannels of por Al2O3 host matrix
with iodine guest substance by vapor phase adsorption method resulted in
the formation of I/por Al2O3 nanocomposite. Electrical properties of these
nanocomposite samples were studied by alternating-current measurements at
a frequency of 1 kHz. Ellipsometric measurements were carried out in the
spectral range 350–1000 nm. Structural transition of iodine species from the
chain structures to molecular iodine was found in I/por Al2O3 nanocomposite
at ∼ 70 ◦C.

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Published

2023-03-18

How to Cite

Alekseeva, N., Cema, G., Podorozhkin, D., Solovyev, V., Trifonov, S., & Veisman, V. (2023). Physical Properties of Self-Assembled Porous Alumina Structures Filled with Iodine. Journal of Self Assembly and Molecular Electronics, 2(1), 27–40. https://doi.org/10.13052/jsame2245-4551.212

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